Table 2 Saporin conjugation of QDs characterized by X-ray photoelectron spectroscopy
| Â | Â | Binding Energy (eV) | Atomic % | ||
|---|---|---|---|---|---|
A. | Â | Â | Silicon | QDs | QD-Sap |
| Â | Se3d3/2 | 57 | 0 | 0.47 | 0.36 |
| Â | Si2s | 151 | 50.62 | 0 | 0 |
| Â | S2p1/2 | 165 | 0 | 1.8 | 1.25 |
| Â | C1s | 285 | 9.09 | 78.08 | 80.27 |
| Â | N1s | 398 | 0 | 1.24 | 0.74 |
| Â | Cd3d5/2 | 405 | Â | Â | Â |
| Â | O1s | 523 | 40.29 | 17.94 | 17.02 |
| Â | Zn2p3/2 | 1022 | 0 | 0.47 | 0.36 |
B. | Â | Â | Silicon | QDs | QD-Sap |
| Â | 285.2eV | C-H (hydrocarbon) | 100 | 65 | 54 |
| Â | 286.8eV | CH2N (amine) | 0 | 27 | 32 |
| Â | 288.0eV | O = C-N (amide) | 0 | 8 | 14 |